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| ,-=r=-= ---== ZY * = .-----r f = anAMPcompany Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching HermeticMetaVCeramic Package .225*.010 (5.72Z.25) Absolute Maximum Ratings at 25C .225t010 (5.72i.25) EMIlYER 167i.010 uNLE.ss OTHERWISE NOTED, TOLERANCES ARE (nILLIMETERS * 13nH, INCHES k.005' Electrical Characteristics at 25C Broadband Test Fixture impedances F(GHz) Z,(Q) z&4 I 3.10 3.25 11.2-j11.7 11.5-j9.5 I 12.7-j7.6 1 8.1 - j5.3 7.1 - j4.3 6.4-j3.3 ( I 3.40 Specifications Sublect to Change Without Notlce. Radar Pulsed Power Transistor, 65W PH3134-65M v2.00 RF Test Fixture GROUND 3 pucEs, /=-=-I i, B;i"^ J/y ,] PC BOARDS, ROGERS 58: 2052-5636-02 2 PLACES 0 r L! FZKR BRASS L LEi~`"`"" mvi TOP J ;$;RtW;T"R MATSINK, ALUHINUN BOARD iLiE:"" 73050257-14 74250125-07 COPPER 73050256-04 73050255-22 73O!iEV-15 VIEW Test Fixture PC Board Dimensions law % `: P "a |
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